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Power Semiconductor Device Testing
From the early stages of design to the point when it’s ready for market, a new power device undergoes a gamut of test and characterization activities, and you face many steps in bringing that device to market, including:
- Designing new devices to meet evolving needs
- Characterizing full performance of new designs
- Preparing the device for production
- Meeting reliability standards for commercial use
- Implementing the device in actual designs
- Evaluating existing devices and designs for new application requirements
Get our e-Guide and learn how to overcome the challenges posed by each stage of the power semi device life cycle.
Featured Content
Testing High Power Semiconductor Devices from Inception to Market
Methods for Efficient, Flexible Test and Characterization throughout the Life Cycle of a Power Semi Device
Creating Multi-SMU Systems with High Power System SourceMeter Instruments Application Note
The design and configuration of test systems for DC characterization of power semiconductor devices using high voltage and high current source measurement units
How to perform a simple breakdown test
How to perform a simple breakdown test on a high power, high voltage IGBT device - Using Keithley's NEW Model 2657A High Power System SourceMeter Instrument AND the Model 8010 High Power Device Test Fixture
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IsoVu Generation 2 Technology White Paper
This white paper describes the theory of operation and performance capabilities of an optically isolated measurement system that offers complete galvanic isolation to accurately resolve high bandwidth …
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Creating Multi-SMU Systems with High Power System SourceMeter Instruments Application Note
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Double Pulse Test with the Tektronix AFG31000 Arbitrary Function Generator
This application note describes how to set up and run a double pulse test using the built-in software on the Tektronix AFG31000 Arbitrary Function Generator. Now you do not need to spend time creating …
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Measuring Vgs on Wide Bandgap Semiconductors
This application note shows a procedure for achieving accurate measurements of gate-to-source voltage on high-side (ungrounded) FETs using the IsoVu measurement system.
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Protecting Parametric Test Systems and the Test Environment from Damaging Transient Overvoltages and Overcurrents
Measuring breakdown parameters is increasingly required to predict a device’s safe region of operation. Sometimes, those breakdown conditions in reliability testing and breakdown test occur as a …
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Achieving Fast Pulse Measurements for Today's High Power Devices - Application Brief
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Testing to 100A by Combining Keithley Model 2651A High Power SourceMeter Instruments (Application Brief)
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Testing to 100A by Combining Keithley Model 2651A High Power SourceMeter Instruments (Application Note)
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Simplify Component Selection with Robust DC Characterization
Watch this webinar to get tips for measuring 2- and 3-terminal semiconductor devices and for using source measure unit instruments during the design process.
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